| PART |
Description |
Maker |
| M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-10 |
8 Mbit (1Mb x 8 or 512Kb x 16), Low Voltage UV EPROM and OTP EPROM
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512KB × 16低压紫外线存储器和OTP存储
81兆812KB × 16低压紫外线存储器和OTP存储
8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器
Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器
From old datasheet system
4 Mbit (512Kb x 8) OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29W004B M29W004B-100N1TR M29W004B-100N5TR M29W004 |
NOT FOR NEW DESIGN - 4 MBIT (512KB X8, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M29W800B M29W800B100M1R M29W800B100M1TR M29W800B10 |
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)Low Voltage Single Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M59DR008F |
8 MBIT (512KB X16, DUAL BANK, PAGE) LOW VOLTAGE FLASH MEMORY
|
ST Microelectronics
|
| M27V402 M27V402-120B1TR M27V402-120B4TR M27V402-12 |
4 Mbit 256Kb x 16 Low Voltage UV EPROM and OTP EPROM 4兆位56Kb × 16低压紫外线存储器和OTP存储
Quadruple 2-Input Positive-AND Gates 14-SOIC 0 to 70
Quadruple 2-Input Positive-AND Gates 14-SO 0 to 70
Hex Inverters 14-SO 0 to 70
Quadruple 2-Input Positive-NOR Gates 14-PDIP 0 to 70
Quadruple 2-Input Positive-NAND Gates 14-PDIP 0 to 70
Quadruple 2-Input Positive-NOR Gates 14-SOIC 0 to 70
Hex Inverters 14-SOIC 0 to 70
Switch Mode Power Supply; Series:ZWS; Output Voltage:15VDC; Output Power Max:10W; Output Current:0.7A; Number of Outputs:1; Supply Voltage Max:265VAC; Supply Voltage Min:85VAC
Switch Mode Power Supply; Output Power:100W; No. of Outputs:1; Output 1 VDC :12VDC; Output Current 1:8.5A; Power Supply Mounting:Open Frame; Approval Bodies:UL, CSA, CE; External Depth:222mm; External Width:62mm RoHS Compliant: Yes
Switch Mode Power Supply; Series:ZWS; Output Voltage:12VDC; Output Power Max:10W; Output Current:0.85A; Number of Outputs:1; Supply Voltage Max:265VAC; Supply Voltage Min:85VAC
Hex Inverters 14-PDIP 0 to 70
From old datasheet system
4 Mbit 512Kb x 8 Low Voltage OTP EPROM
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29W800DB M29W800DT M29W800DB70M1T M29W800DB70M6T |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
Low-Power Configurable Multiple-Function Gate 6-SOT-23 -40 to 85 8兆（1兆x812KB的x16插槽，引导块V电源快闪记忆
Low-Power Configurable Multiple-Function Gate 6-DSBGA -40 to 85 8兆（1兆x812KB的x16插槽，引导块V电源快闪记忆
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory
|
STMicroelectronics N.V.
ST Microelectronics
|
| M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M48Z512A-85PM1 M48Z512AY-85PM1 M48Z512A-70PM1 |
4 MBIT (512KB X 8) ZEROPOWER SRAM
|
SGS Thomson Microelectronics
|
| M48T512V M48T512Y M48T512Y-85PM1 M48T512V-70PM1 M4 |
3.3V-5V 4 MBIT 512KB X8 TIMEKEEPER SRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
